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ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) THERMAL CHARACTERISTICS MAXIMUM RATINGS
ON CHARACTERISTICS OFF CHARACTERISTICS DC Current Gain (IC = 50 mAdc, VCE = 10 Vdc) Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) Collector Cutoff Current (VCB = 300 Vdc, IE = 0) Collector-Emitter Sustaining Voltage (IC = 1.0 mAdc, IB = 0) Thermal Resistance, Junction to Case Operating and Storage Junction Temperature Range Total Power Dissipation @ TC = 25_C Derate above 25_C Collector Current -- Continuous Emitter-Base Voltage Collector-Emitter Voltage Characteristic Characteristic Rating VCEO(sus) Symbol Symbol Symbol TJ, Tstg VCEO ICBO IEBO VEB hFE JC PD IC Min 300 30 -- -- - 65 to + 150 Value 6.25 Max 20 0.16 500 300 3.0 CASE 77-08 TO-225AA TYPE Max 240 100 100 -- mAdc Watts W/_C
(c) Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data * Suitable for Transformerless, Line-Operated Equipment * Thermopad Construction Provides High Power Dissipation Rating for High Reliability . . . useful for high-voltage general purpose applications.
Plastic Medium Power NPN Silicon Transistor
SEMICONDUCTOR TECHNICAL DATA
MOTOROLA
REV 7
0.5 AMPERE POWER TRANSISTOR NPN SILICON 300 VOLTS 20 WATTS
MJE340
Order this document by MJE340/D
_C/W
Adc
Adc
Unit
Unit
Unit
Vdc
Vdc
Vdc
_C
--
1
MJE340
32 PD, POWER DISSIPATION (WATTS) 28 0.8 20 16 12 8.0 4.0 0 0 20 40 60 80 100 120 140 160 0 10 20 MJE340 0.2 IC/IB = 5.0 30 50 100 200 IC, COLLECTOR CURRENT (mA) 300 500 V, VOLTAGE (VOLTS) 24 1.0 TJ = 25C VBE(sat) @ IC/IB = 10
0.6
VBE @ VCE = 10 V
0.4 VCE(sat) @ IC/IB = 10
TC, CASE TEMPERATURE (C)
Figure 1. Power Temperature Derating
Figure 2. "On" Voltages
ACTIVE-REGION SAFE OPERATING AREA
1.0 IC, COLLECTOR CURRENT (AMP) 0.5 0.3 0.2 0.1 0.05 0.03 0.02 0.01 10 50 70 100 200 20 30 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 300 SECOND BREAKDOWN LIMIT BONDING WIRE LIMIT THERMAL LIMIT TC = 25C SINGLE PULSE TJ = 150C dc 1.0 ms 10 s 500 s
Figure 3. MJE340 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 3 is based on T J(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) 150_C. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.
v
300 200 hFE , DC CURRENT GAIN TJ = 150C +100C + 25C 30 20 - 55C VCE = 10 V VCE = 2.0 V
100 70 50
10
1.0
2.0
3.0
5.0
7.0
10
20 30 50 IC, COLLECTOR CURRENT (mAdc)
70
100
200
300
500
Figure 4. DC Current Gain 2 Motorola Bipolar Power Transistor Device Data
MJE340
PACKAGE DIMENSIONS
-B- U Q
F M
C
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D F G H J K M Q R S U V INCHES MIN MAX 0.425 0.435 0.295 0.305 0.095 0.105 0.020 0.026 0.115 0.130 0.094 BSC 0.050 0.095 0.015 0.025 0.575 0.655 5 _ TYP 0.148 0.158 0.045 0.055 0.025 0.035 0.145 0.155 0.040 --- MILLIMETERS MIN MAX 10.80 11.04 7.50 7.74 2.42 2.66 0.51 0.66 2.93 3.30 2.39 BSC 1.27 2.41 0.39 0.63 14.61 16.63 5 _ TYP 3.76 4.01 1.15 1.39 0.64 0.88 3.69 3.93 1.02 ---
-A-
123
H
K
V G S D 2 PL 0.25 (0.010)
M
J R 0.25 (0.010) A
M
A
M
M
B
M
B
M
STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE
CASE 77-08 TO-225AA TYPE ISSUE V
Motorola Bipolar Power Transistor Device Data
3
MJE340
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
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JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298
4
Motorola Bipolar Power Transistor Device Data
*MJE340/D*
MJE340/D


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